Search results for "Temperature Coefficient"
showing 10 items of 25 documents
Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells
2020
In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…
The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers
2013
International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
Temperature Coefficients of Solar Cell Parameters at Maximum Power Point
2020
Analytical expressions for the temperature coefficients of the maximum power point voltage and current are presented. The temperature coefficients are calculated assuming the bandgap to be a linear function of the temperature and accounting for energy losses of non-radiative nature. The latter are introduced in the model through the External Radiative Efficiency. The so-called $\gamma$ parameter, which has been shown to account for the thermal sensitivity of all mechanisms determining the open-circuit voltage, appears to also play a role in the temperature coefficient of the maximum power point voltage and current. Numerical results and a comparison with experimental measurements are also p…
Investigation of the Temperature Sensitivity of 20-Years Old Field-Aged Photovoltaic Panels Affected by Potential Induced Degradation
2022
One effect of moisture ingress on solar panels is potential induced degradation (PID). Solar panels affected by PID experience large leakage currents between the solar cells and the module’s frame, which leads to substantial power degradation. In the present work, the temperature coefficients of 3 old PV panels affected by PID were investigated. In the electroluminescence images, solar cells nearer to the edge of the modules appear darker due to ohmic shunting. IR thermal images acquired under clear sky outdoor conditions show that the majority of the warmer cells (hotspots) were located closer to the edge of the modules. The difference in cell temperature (∆T) due to PID effect…
Enhanced β-turn conformational stability of tripeptides containing Δphe in cis over trans configuration
2013
Conformations of three pairs of dehydropeptides with the opposite configuration of the Delta Phe residue, Boc-Gly-Delta(Z/E)Phe-Phe-p-NA (Z- p -NA and E- p -NA), Boc-Gly-Delta(Z/E)Phe-Phe-OMe (Z-OMe and E-OMe), and Boc-Gly-Delta(Z/E)Phe-Phe-OH (Z-OH and E-OH) were compared on the basis of CD and NMR studies in MeOH, TFE, and DMSO. The CD results were used as the additional input data for the NMR-based calculations of the detailed solution conformations of the peptides. It was found that Z- p -NA, E- p -NA, Z-OMe, and Z-OH adopt the beta-turn conformations and E-OMe and E-OH are unordered. There are two overlapping type III beta-turns in Z- p -NA, type II' beta-turn in E- p -NA, and type II …
Temperature Dependent Quantum Efficiencies in Multicrystalline Silicon Solar Cells
2015
Abstract Several field studies comparing modules based on Elkem Solar Silicon ® (ESS ® ) cells with reference modules based on non-compensated virgin polysilicon show that the compensated ESS ® modules outperform the reference modules with comparable installed capacity under certain operating conditions. At high temperatures and high irradiation conditions the modules based on compensated silicon produce more energy than the reference modules. In order to increase the understanding of the observed effect cells are studied at different temperatures by the means of IV-characteristics as well as quantum efficiencies. Quantum efficiency measurements show that the main difference between ESS ® c…
Photoelectron spectra of aluminum cluster anions: Temperature effects and ab initio simulations
1999
Photoelectron (PES) spectra from aluminum cluster anions (from 12 to 15 atoms) at various temperature regimes, were studied using ab-initio molecular dynamics simulations and experimentally. The calculated PES spectra, obtained via shifting of the simulated electronic densities of states by the self-consistently determined values of the asymptotic exchange-correlation potential, agree well with the measured ones, allowing reliable structural assignments and theoretical estimation of the clusters' temperatures.
Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Archit…
2018
Compensation engineering enables the achievement of lower ingot resistivities with relatively constant performances along the ingot height. In this paper the impact of the bulk resistivity on the cell performances and the temperature coefficients is investigated for compensated and non-compensated multicrystalline silicon. Based on experimental data we show that reducing the bulk resistivity below a certain value improves the temperature coefficients but deteriorates the cell performances for two distinct cell architectures (AI-BSF and PERCT). Moreover this performance loss is not balanced out by the improved temperature coefficient for operating conditions below 70°C.
Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$
2020
This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …